Masters Thesis student

onsemi · Kista

SiC MOSFETs have been commercialized over the years in pursuit of lower on-resistance and higher switching performance but there are still some gate oxide related challenges related to material properties. Dynamic Gate Switching (DGS) instability is a phenomenon when a SiC MOSFET is switched in a bipolar mode (from a positive to a negative Vgs) and this leads to permanent shift of the threshold voltage (ΔV_th). This effect occurs during application conditions but can be observed also by using just a gate driver for the switching with the SiC MOSFET drain and gate shorted. Previous investigations into the DGS instability have mostly been limited to room temperature conditions. This Thesis work will involve understanding of this phenomenon as a function of temperature which might lead to creation of a test setup to enable these measurements. Characterization will be done both for packaged devices as well as on wafer level, and the Vth drift behaviour will be modeled.

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.

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